Stark-Localization-Limited Franz-Keldysh Effect in InAlAs Digital Alloys

被引：2

作者：

Yuan, Yuan ^{[1
]}

Zheng, Jiyuan ^{[1
]}

Sun, Keye ^{[1
]}

Jones, Andrew H. ^{[1
]}

Rockwell, Ann K. ^{[2
]}

March, Stephen D. ^{[2
]}

Shen, Yang ^{[1
]}

Bank, Seth R. ^{[2
]}

Campbell, Joe C. ^{[1
]}

机构：

[1] Univ Virginia, Elect & Comp Engn Dept, 351 McCormick Rd, Charlottesville, VA 22904 USA

[2] Univ Texas Austin, Elect & Comp Engn Dept, 1616 Guadalupe St, Austin, TX 78758 USA

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2019年 / 13卷 / 09期

关键词：

digital alloys; Franz-Keldysh effect; Stark localization; ELECTRIC-FIELD; ELECTROABSORPTION; SUPERLATTICES; DEPENDENCE;

D O I：

10.1002/pssr.201900272

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The optical absorption characteristics of the InAlAs digital alloy semiconductor are investigated. The external quantum efficiency of the InAlAs digital alloy is compared with that of the In0.52Al0.48As random alloy. Unlike the random alloy, the digital alloy exhibits electric-field-induced Stark localization, which increases the optical absorption and suppresses the Franz-Keldysh red shift of the optical absorption edge.

引用

页数：5

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