Ultrafine and uniform silicon nanowires grown with zeolites

被引:33
作者
Li, CP
Sun, XH
Wong, NB
Lee, CS
Lee, ST
Teo, BK
机构
[1] City Univ Hong Kong, Ctr Super Diamond & Adv FIlms, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] City Univ Hong Kong, Dept Biol & Chem, Hong Kong, Hong Kong, Peoples R China
[3] Univ Illinois, Dept Chem, Chicago, IL 60607 USA
基金
美国国家科学基金会;
关键词
D O I
10.1016/S0009-2614(02)01375-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Ultrafine and uniform silicon nanowires (SiNWs), with a Si crystalline core of 1-5 nm (average 3 nm) in diameter and a SiO2 outer layer of 10-20 nm thick, were synthesized by the oxide-assisted growth method via the disproportionation of thermally evaporated SiO using zeolite as a template/precursor. From transmission and secondary electron microscopic characterizations, we deduced that the zeolite acted to limit the lateral growth of the Si crystalline core and supply the excess oxide to form the thick oxide outer layer. The ultrafine SiNWs exhibited strong photoluminescence that peaked at 720 nm. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:22 / 26
页数:5
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