Quantitative analysis of low-energy N2+ implantation in TiC using XPS and TRIM

We have studied the implantation of 2 keV N-2(+) ions in TiC. Both the shape and binding energy of the different core levels, as well as their modification, have been analysed during the implantation process. In order to quantify the implantation steps as a function of the N-2(+) dose, we have used a Monte-Carlo-based TRIM code to simulate the implantation profile of the nitrogen ions, except for the absolute atomic concentration, which is then determined by making use of the usual equations for quantitative XPS. We have derived the atomic concentration of implanted nitrogen atoms, i.e. N(z,D-N), as a function of depth and the N-2(+) ion dose in terms of TRIM simulated in depth profiles and the usual equations for quantitative XPS analysis. Owing to the accumulation effect and the sputtering of the target surface, the static nitrogen profiles N-N(z) derived by TRIM evolve to an erf(z) distribution with increasing ion dose DN. A proper analysis of the Ti 2p, C 1s and N 1s peaks also allows different species to be distinguished and their distribution in depth. Copyright (C) 2002 John Wiley Sons, Ltd.