CMOS;
distributed active transformer (DAT);
gain boosting;
power amplifier (PA);
V-band;
D O I:
10.1109/TMTT.2009.2021876
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A 55-71-GHz fully integrated power amplifier (PA) using a distributed active transformer (DAT) is implemented in 90-nm RF/MS CMOS technology. The DAT combiner, featuring efficient power combination and direct impedance transformation, is suitable for millimeter-wave (MMW) PA design. Systematic design procedures including an impedance allocation plan, a compensation line, and a gain boosting technique are presented for the MMW DAT PA. The monolithic microwave integrated circuit (MMIC) performs a high and flat small-signal gain of 26 +/- 1.5 dB from 55 to 71 GHz, which covers a full band for 60-GHz wireless personal area network applications. Using cascode devices and a DAT four-way power combination, the CMOS PA delivers 14.5- and 18-dBm saturated output power with 10.2% and 12.2% power-added efficiency under 1.8- and 3-V supply voltage, respectively, at 60 GHz. The maximum linear output power (P-1 (dB)) is 14.5 dBm. To the best of our knowledge, the MMIC is the first demonstration of a V-band CMOS PA using a DAT combining scheme with highest linear output power among the reported 60-GHz CMOS PAs to date.
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页码:1637 / 1646
页数:10
相关论文
共 24 条
[21]
Suzuki T., 2008, IEEE INT SOL STAT CI, P562
[22]
Tsai JH, 2007, IEEE MTT S INT MICR, P1127
[23]
Wang C.-H., 2006, IEEE INT SOLID STATE, P659
[24]
Wang Y, 2001, BMC Dev Biol, V1, P9, DOI 10.1186/1471-213X-1-9