Effects of hydrogen introduction on electrical and optical properties of Cd-doped Ge oxide and Zn oxide thin films

被引：0

作者：

Arita, M ^{[1
]}

Konishi, H ^{[1
]}

Matsuda, K ^{[1
]}

Masuda, M ^{[1
]}

Hayashi, Y ^{[1
]}

机构：

[1] Kyushu Univ, Fac Engn, Dept Mat Sci & Engn, Hakozaki Fukuoka 8128581, Japan

来源：

PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II | 2001年

关键词：

cadmium oxide; germanium oxide; zinc oxide; thin film; transparency; electrical conductivity; hydrogen introduction;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Cadmium-doped Ge oxide and Zn oxide thin films were deposited by RF magnetron sputtering. The electrical and optical properties of these films were investigated. All deposited films except for highly Cd-doped Ge oxide were transparent to visible light. Hydrogen ion implantation reduced the resistivity of the films, although the optical transmittance for visible light did not change significantly. The enhancement of conductivity could be attributed to the increase in carrier density by the hydrogen introduction.

引用

页码：2841 / 2844

页数：4

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