Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current

被引：19

作者：

Shi, Bangbing ^{[1
]}

Feng, Shiwei ^{[1
]}

Zhang, Yamin ^{[1
]}

Bai, Kun ^{[1
]}

Xiao, Yuxuan ^{[1
]}

Shi, Lei ^{[2
]}

Zhu, Hui ^{[1
]}

Guo, Chunsheng ^{[1
]}

机构：

[1] Beijing Univ Technol, Fac Informat Technol, Beijing 100124, Peoples R China

[2] Shanghai Second Polytech Univ, Coll Engn, Shanghai 201209, Peoples R China

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2019年 / 34卷 / 10期

基金：

北京市自然科学基金; 中国国家自然科学基金;

关键词：

Junction temperature; silicon carbide bipolar junction transistor (SiC BJT); turn-OFF process; SENSITIVE ELECTRICAL PARAMETERS; POWER MOSFETS; IR CAMERA; RELIABILITY;

D O I：

10.1109/TPEL.2019.2894346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes an electrical method for estimation of the vertical junction temperature of silicon carbide bipolar junction transistors (SiC BJTs). This measurement method is based on measurement of the base-collector voltage (V-BC) drop at a low current (V-BC((low))) during the turn-oFF process. This voltage shows both good sensitivity and linearity with respect to temperature. The traditional temperature-sensitive electrical parameter V-BE((low)) (i.e., the base-emitter voltage at a low current) and an infrared camera are used to compare the characteristics of V-BC((low)). The results show that use of V-Bc(low) provides more accurate junction temperature and thermal resistance measurement results, which can then be used to extract the vertical junction temperature of the SiC BJT under test.

引用

页码：10136 / 10142

页数：7

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