InAs/Al0.2Ga0.8Sb quantum well Hall effect sensors

被引：20
作者：
Behet, M
Bekaert, J
De Boeck, J
Borghs, G
机构：
[1] IMEC, B-3001 Louvain, Belgium
[2] Katholieke Univ Leuven, Vaste Stof Fys & Magnetisme Lab, B-3001 Louvain, Belgium
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 2000年 / 81卷 / 1-3期
关键词：
Hall element; InAs quantum well; InAs/AlGaSb; MBE;
D O I：
10.1016/S0924-4247(99)00162-4
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Hall sensors with high sensitivity and excellent temperature stability were fabricated from quantum wells based on an InAs/Al0.2Ga0.8Sb heterostructure. The layers were grown on semi-insulating GaAs substrates by molecular beam epitaxy (MBE). Maximum Hall mobilities of 29.500 cm(2) V-1 s(-1) with sheet electron concentrations of 2 x 10(12) cm(-2) were measured at room temperature for an undoped quantum well structure. For a cross-shaped sensor, these excellent transport properties resulted in sensitivities of 0.9 T-1 (for voltage drive) and 300 V A(-1) T-1 (for current drive). Additional doping of the InAs quantum well leads to an improvement of the temperature stability of the input resistance and sensitivity in the temperature range of -100 degrees C to +150 degrees C. (C) 2000 Elsevier Science S.A. All rights reserved.
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页码：13 / 17
页数：5
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