Preparation and properties of antiferroelectric lead zirconate thin films by chemical solution deposition

被引：0

作者：

Maiwa, H

Ichinose, N

机构：

[1] Shonan Inst Technol, Dept Mat Sci & Ceram Technol, Fujisawa, Kanagawa 2518511, Japan

[2] Waseda Univ, Dept Mat Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan

来源：

FERROELECTRICS | 2001年 / 258卷 / 1-4期

关键词：

lead zirconate; field-induced phase switching; antiferroelectrics; thin films; chemical solution deposition; MEMS;

D O I：

10.1080/00150190108008687

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Polycrystalline lead zirconate (PZ) thin films were prepared by chemical solution deposition. Pb/Zr atomic ratios of our precursor solutions were 1.0/1 and 1.2/1, respectively. Single-phase perovskite PZ films were obtained after heat treatment at 600degreesC and 700degreesC for 1h. The PZ thin films deposited on Pt/Ti/SiO(2)/Si substrate exhibited a double hysteresis loop, indicating that electric-field-induced antiferroelectric to ferroelectric phase transformation occurred at room temperature. The dielectric constant and loss tangent at room temperature were 131 and 0.045, respectively.

引用

页码：315 / 320

页数：6