Initial growth monitoring of GaN epitaxy on 6H-SiC by metal-organic molecular beam epitaxy

被引：7

作者：

Honda, T ^{[1
]}

Fujita, N ^{[1
]}

Maki, K ^{[1
]}

Yamamoto, Y ^{[1
]}

Kawanishi, H ^{[1
]}

机构：

[1] Kohgakuin Univ, Dept Elect Engn, Hachioji, Tokyo 1920015, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 209卷 / 2-3期

关键词：

GaN; MBE; 6H-SiC; RHEED; lattice constant; mixed phase;

D O I：

10.1016/S0022-0248(99)00577-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The lattice constants of GaN layers along the a-axis were estimated using reflection high-energy electron diffraction (RHEED) patterns during metal-organic molecular beam epitaxy (MO-MBE) growth. The lattice relaxation of GaN layers was observed during the initial growth. The crystal structure changed from the mixed (cubic and hexagonal) to the hexagonal phase at the high growth temperature of 814 degrees C. On the other hand, the crystal structure changed from the hexagonal to the mixed phase at the low growth temperature of 772 degrees C. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：392 / 395

页数：4

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