Sputtering and surface structure modification of gold thin films deposited onto silicon substrates under the impact of 20-160 keV Ar+ ions

The induced sputtering and surface state modification of Au thin films bombarded by swift Ar+ ions under normal incident angle have been studied over an energy range of (20-160) keV using three complementary techniques: Rutherford backscattering spectroscopy (RBS), scanning electron microscopy (SEM) and X-ray diffraction (XRD). The sputtering yields determined by RBS measurements using a 2 MeV He-4(+) ion beam were found to be consistent with previous data measured within the Ar+ ion energy region E <= 50 key, which are thus extended to higher bombarding energies. Besides, the SEM and XRD measurements clearly point out that the irradiated Au film surfaces undergo drastic modifications with increasing the Ar+ ion energy, giving rise to the formation of increasingly sized grains of preferred (1 I I) crystalline orientations. The relevance of different sputtering yield models for describing experimental data is discussed with invoking the observed surface effects induced by the Ar+ ion irradiation. (C) 2014 Elsevier B.V. All rights reserved.