Zero-bias anomaly in quantum wires

被引：40

作者：

Sarkozy, S. ^{[1
]}

Sfigakis, F. ^{[1
]}

Das Gupta, K. ^{[1
]}

Farrer, I. ^{[1
]}

Ritchie, D. A. ^{[1
]}

Jones, G. A. C. ^{[1
]}

Pepper, M. ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

来源：

PHYSICAL REVIEW B | 2009年 / 79卷 / 16期

基金：

英国工程与自然科学研究理事会;

关键词：

gallium arsenide; Kondo effect; semiconductor heterojunctions; semiconductor quantum wires; spin polarised transport; Zeeman effect; SADDLE-POINT CONSTRICTION; DIMENSIONAL ELECTRON-GAS; CONDUCTANCE; CONTACTS; TRANSPORT; LIMIT; DOTS;

D O I：

10.1103/PhysRevB.79.161307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We use quantum wires fabricated on undoped GaAs/AlGaAs heterostructures in which the average impurity separation is greater than the device size to compare the behavior of the zero-bias anomaly against predictions from Kondo and spin-polarization models. Both theories display shortcomings, the most dramatic of which is the linear electron-density dependence of the zero-bias anomaly spin splitting at fixed magnetic field B and the suppression of the Zeeman effect at pinch off.

引用

页数：4

共 39 条

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