Anisotropy of boron nitride thin-film reflectivity spectra by generalized ellipsometry

被引：59

作者：

Schubert, M

Rheinlander, B

Franke, E

Neumann, H

Hahn, J

Roder, M

Richter, F

机构：

[1] INST SURFACE MODIFICAT,D-04303 LEIPZIG,GERMANY

[2] TECH UNIV CHEMNITZ ZWICKAU,INST PHYS,D-09107 CHEMNITZ,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 14期

关键词：

D O I：

10.1063/1.118701

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Generalized variable angle spectroscopic ellipsometry (gVASE) over the photon energy range from 1.5 to 3.5 eV has been used to study and distinguish the hexagonal and cubic phases of boron nitride in thin films (50-500 nm) deposited by magnetron sputtering onto (100) silicon. Furthermore, gVASE is used to characterize the anisotropic reflectivity of the hexagonal phase films with different microstructures. (C) 1997 American Institute of Physics.

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页码：1819 / 1821

页数：3

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