Electrical characteristics and optimization of extended-drain MOS transistor with dual-workfunction-gate for mixed-signal applications

被引：4

作者：

Baek, Ki-Ju ^{[1
]}

Na, Kee-Yeol ^{[2
]}

Kim, Yeong-Seuk ^{[1
]}

机构：

[1] Chungbuk Natl Univ, Dept Semicond Engn, Chungbuk 361763, South Korea

[2] Chungbuk Prov Coll, Dept Semicond Elect, Chungbuk 373807, South Korea

来源：

SOLID-STATE ELECTRONICS | 2014年 / 100卷

基金：

新加坡国家研究基金会;

关键词：

High voltage (HV); MOSFET; Extended-drain MOS (EDMOS); Dual-workfunction-gate (DWFG); Mixed-signal application; WORK-FUNCTION-GATE; VOLTAGE; TECHNOLOGIES; MOSFETS; DEVICES;

D O I：

10.1016/j.sse.2014.07.004

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the electrical characteristics of high-voltage (HV) extended-drain MOS (EDMOS) field-effect transistor with dual-workfunction-gate (DWFG) to enhance the device performance and device optimization for mixed-signal applications. For n-channel DWFG EDMOS device fabrication, the polycrystalline-silicon (poly-Si) gate on the source and drain side were doped by p+ and n+ ion implantation, respectively. The DWFG device with shorter p+ poly-Si gate length showed lower on-resistance (R-ON) characteristics compared to the conventional device. Therefore, the DWFG device with shorter p+ poly-Si gate length is suitable for switching applications. On the other hand, the best improvements in the drain conductance (g(ds)) and intrinsic voltage gain (A(V)), which is important parameters of analog circuits, were shown in the DWFG device with identical n+ and p+ poly-Si gate length. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：49 / 53

页数：5

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