Effect of Interface Roughness on Magnetoresistance and Magnetization Switching in Double-Barrier Magnetic Tunnel Junction

被引：3

作者：

Hwang, J. Y. ^{[1
]}

Lee, S. Y. ^{[1
]}

Lee, N. I. ^{[1
]}

Yim, H. I. ^{[1
]}

Kim, M. Y. ^{[1
]}

Lee, W. C. ^{[1
]}

Rhee, J. R. ^{[1
]}

Chun, B. S. ^{[2
,3
]}

Kim, T. W. ^{[4
]}

Kim, Y. K. ^{[3
]}

Lee, S. S. ^{[5
]}

Hwang, D. G. ^{[5
]}

Ri, E. J. ^{[6
]}

机构：

[1] Sookmyung Womens Univ, Dept Phys, Seoul 140742, South Korea

[2] Trinity Coll Dublin, Sch Phys, CRANN, Dublin, Ireland

[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

[4] Sejong Univ, Seoul 143747, South Korea

[5] Sangji Univ, Dept Oriental Biomed Engn, Wonju 220702, South Korea

[6] Korean Inst Ind Technol, Div Prod Tech, Intzeon 406130, South Korea

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2009年 / 45卷 / 06期

关键词：

Amorphous ferromagnetic; bias voltage dependence; CoFeSiB; magnetic tunnel junction; ROOM-TEMPERATURE; BIAS VOLTAGE;

D O I：

10.1109/TMAG.2009.2018586

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The three kinds of double-barrier magnetic tunnel junction (DMTJ) with or without amorphous ferromagnetic Co70.5Fe4.5Si15B10 (in at. %) free-layer were investigated to understand the effect of the free-layer on the bias voltage dependence of tunneling magnetoresistance (TMR) ratio. The DMTJ structure consisted of Ta 45/Ru 9.5/IrMn 10/CoFe 7/AlOx/free-layer 7/AlOx/CoFe 7/IrMn 10/Ru 60 (thickness in nm). Various free layers, such as CoFe 7, CoFeSiB 7, and CoFe 1.5/CoFeSiB 4/CoFe 1.5 were prepared and compared. The roughness values of the interface between free-layer and tunnel barrier were confirmed by using the techniques of X-ray reflectivity and transmission electron microscopy. As a result, the amorphous free-layer made the interface roughness of DMTJ smoother, reducing the interlayer coupling field and suppressing the bias voltage dependence of TMR ratio at a given voltage.

引用

页码：2396 / 2398

页数：3

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