Wavelength dependence of laser cleaning for field emitter Arrays

被引：1

作者：

Takai, M ^{[1
]}

Suzuki, N ^{[1
]}

Yavas, O ^{[1
]}

Hosono, A ^{[1
]}

Okuda, S ^{[1
]}

机构：

[1] Osaka Univ, Res Ctr Mat Extreme Condit, Toyonaka, Osaka 5608531, Japan

来源：

SECOND INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION | 2002年 / 4426卷

关键词：

laser cleaning; field emitter array; field emission display; ultra violet wavelength; vacuum microelectronics;

D O I：

10.1117/12.456820

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Different harmonics of the Nd:YLF laser, ranging from infrared to ultraviolet wavelength region (lambda = 1047, 523, and 349 nm), were used for cleaning of Nb-gated silicon field emitter tips to improve the emission efficiency. An increase of the emission current by a factor of 5 after laser irradiation was observed only in case of ultraviolet laser irradiation at lambda = 349 nm, indicating that contaminants were successfully removed from the tip surface and the cleaning process was strongly wavelength dependent.

引用

页码：302 / 307

页数：2

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