Wavelength dependence of laser cleaning for field emitter Arrays

被引：1
|
作者：
Takai, M [1 ]
Suzuki, N [1 ]
Yavas, O [1 ]
Hosono, A [1 ]
Okuda, S [1 ]
机构：
[1] Osaka Univ, Res Ctr Mat Extreme Condit, Toyonaka, Osaka 5608531, Japan
来源：
SECOND INTERNATIONAL SYMPOSIUM ON LASER PRECISION MICROFABRICATION | 2002年 / 4426卷
关键词：
laser cleaning; field emitter array; field emission display; ultra violet wavelength; vacuum microelectronics;
D O I：
10.1117/12.456820
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Different harmonics of the Nd:YLF laser, ranging from infrared to ultraviolet wavelength region (lambda = 1047, 523, and 349 nm), were used for cleaning of Nb-gated silicon field emitter tips to improve the emission efficiency. An increase of the emission current by a factor of 5 after laser irradiation was observed only in case of ultraviolet laser irradiation at lambda = 349 nm, indicating that contaminants were successfully removed from the tip surface and the cleaning process was strongly wavelength dependent.
引用
收藏
页码：302 / 307
页数：2
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