Improved large optical cavity design for 10.6 μm (Al)GaAs quantum cascade lasers

被引：8

作者：

Scarpa, G ^{[1
]}

Ulbrich, N ^{[1
]}

Sigl, A ^{[1
]}

Bichler, M ^{[1
]}

Schuh, D ^{[1
]}

Amann, MC ^{[1
]}

Abstreiter, G ^{[1
]}

机构：

[1] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期

关键词：

quantum cascade laser; intersubband; infrared;

D O I：

10.1016/S1386-9477(02)00217-5

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We have developed an improved waveguide design for 10.6 mum (Al)GaAs quantum cascade lasers based on a large optical cavity. With the optical confinement based on the free-carrier plasma effect we accurately evaluate the complex dielectric constant as a function of doping densities of the GaAs waveguide layers. Free-carrier absorption losses and confinement factors are simulated and compared with experimental results. An improved design was obtained by varying the doping profile of the large optical cavity resulting in a 30% reduced threshold current density of 3.4 kA cm(-2) at 77 K heatsink temperature. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：844 / 847

页数：4

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