AlGaN/GaN HEMTs on diamond substrate with over 7W/mm output power density at 10 GHz

被引：62

作者：

Dumka, D. C. ^{[1
]}

Chou, T. M. ^{[1
]}

Faili, F. ^{[2
]}

Francis, D. ^{[2
]}

Ejeckam, F. ^{[2
]}

机构：

[1] TriQuint Semicond, Infrastruct & Def Prod, Richardson, TX 75080 USA

[2] Element Six Technol, Santa Clara, CA 95054 USA

来源：

ELECTRONICS LETTERS | 2013年 / 49卷 / 20期

关键词：

D O I：

10.1049/el.2013.1973

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Record RF performance of AlGaN/GaN high electron mobility transistors (HEMTs) on a diamond substrate with over 7 W/mm output power density at 10 GHz is reported. It is achieved along with the peak poweradded-efficiency over 46% and power gain over 11 dB for 2 × 100 μm gate-width HEMTs at 40 V drain bias. Device wafers are prepared by first removing the host Si (111) substrate and nitride transition layers beneath the channel, depositing a 50 nm dielectric onto the exposed GaN buffer, and finally growing 100 μm of a chemical vapour deposition diamond onto the dielectric adhering to the epitaxial AlGaN/GaN. This approach enables the active GaN channel to be brought within 1 μm of the diamond substrate. Test HEMTs are fabricated using a dielectrically defined 0.25 μm gate length process. © The Institution of Engineering and Technology 2013.

引用

页码：1298 / U88

页数：2