Role of adsorption kinetics in the low-temperature Si growth by gas-source molecular beam epitaxy:: In situ observations and detailed modeling of the growth (vol 79, pg 746, 2001)

被引：0

作者：

Murata, T ^{[1
]}

Nakazawa, H

Tsukidate, Y

Suemitsu, M

机构：

[1] Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea

[2] Sungkyunkwan Univ, Ctr Nanotubes & Nanostructured Composites, Suwon 440746, South Korea

来源：

关键词：

D O I：

10.1063/1.1490405

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：184 / 184

页数：1