Texture analysis of copper bonding wire

被引：3

作者：

Baeck, SM

Park, KK

Ha, H

Oh, Y

Park, Y

Moon, JT

Lee, J

Oh, KH

机构：

[1] Seoul Natl Univ, Sch Mat Sci & Engn, Kwanak Ku, Seoul 151742, South Korea

[2] MK Electron Co Ltd, Yongin Si 790785, Kyunggi Do, South Korea

[3] Korea Inst Sci & Technol, Div Mat Sci & Engn, Seoul 130650, South Korea

来源：

TEXTURES OF MATERIALS, PTS 1 AND 2 | 2002年 / 408-4卷

关键词：

copper bonding wire; EBSD; recrystallization; texture;

D O I：

10.4028/www.scientific.net/MSF.408-412.803

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Due to the decrease of IC chip size, the development of fine diameter copper bonding wires attaches chip to lead frame is on increasing trend. To get high-strength fine pitch copper bonding wires, optimization of wire drawn procedure and optimized recrystallization annealing method are investigated. The microstructure and microtexture of bonding wires are analyzed by using Electron Back Scattered Diffraction(EBSD) and the relations between initial diameter of ingot and microtexture are revealed. Typical drawing and final annealing of copper bonding wires gives minor <111> and major <100> texture at 350degreesC and 450degreesC. Intermediate annealing before final diameter makes major <111> and minor <100> component with optimum grain size.

引用

页码：803 / 808

页数：6