Investigations of acceptor related photoluminescence from electrodeposited Ag-doped ZnO

被引：34

作者：

Thomas, M. A. ^{[1
]}

Cui, J. B. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys & Astron, Little Rock, AR 72204 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 105卷 / 09期

关键词：

OPTICAL-PROPERTIES; TEMPERATURE-DEPENDENCE; RAMAN-SCATTERING; ZINC-OXIDE; EXCITON; FILMS; NUCLEATION; DEFECTS; GROWTH; ENERGY;

D O I：

10.1063/1.3125447

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of Ag doping on the photoluminescence (PL) of low temperature grown ZnO have been investigated. Ag-doped ZnO exhibited distinguished PL characteristics from the undoped material. An intense emission at 3.323 eV from a free electron to bound acceptor transition was observed in the Ag-doped ZnO, while a donor bound exciton transition dominated the band edge emission for undoped ZnO. The acceptor binding energy of 117 meV calculated from the temperature dependent PL is consistent with the reported values. This spectroscopic investigation indicates that Ag can be introduced into the host material by a cost-efficient electrochemical process and is a potential p-type dopant for ZnO. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3125447]

引用

页数：5

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