Integration of triple-band GSM antenna switch module using SOICMOS

被引：9

作者：

Bonkowski, J ^{[1
]}

Kelly, D ^{[1
]}

机构：

[1] Peregrine Semicond Corp, Mundelein, IL 60060 USA

来源：

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2004年

关键词：

antenna switch module; integration; SOI; FET switch;

D O I：

10.1109/RFIC.2004.1320670

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An integrated triple-band GSM antenna switch module, fabricated in RF CMOS on a sapphire substrate, is presented in this paper. The low cost and compact size requirements in wireless and mobile communication systems motivate the continuing integration of the analog portions of the design. The antenna switch die incorporates a FET switch, transmit path filters, and all bias and control circuitry onto the same substrate using a 0.5 mum CMOS process. A revised version of the die is also proposed, which makes use of an additional copper interconnect layer to reduce die area.

引用

页码：511 / 514

页数：4