Enhanced output of GaN-based light-emitting diodes with stripe-contact electrodes

被引：2

作者：

Zhu, Yanxu ^{[1
]}

Xu, Chen ^{[1
]}

Liang, Ting ^{[1
]}

Da, Xiaoli ^{[1
]}

Zhang, Jianming ^{[1
]}

Chen, Libing ^{[1
]}

Shen, Guangdi ^{[1
]}

机构：

[1] Beijing Univ Technol, Inst Elect Engn & Informat, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

关键词：

D O I：

10.1063/1.2338786

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High brightness GaN-based light-emitting diodes(LEDs) with stripe-contact electrodes have been developed. The p-type Ohmic contact layer is composed of oxidized Ni/Au stripes and NiO stripes. A Ag (3000 A) omnidirectional reflector covers the p-type contact. The n-type contact is a Ti/Al planar film with a Ti/Al stripe. All Ni/Au, NiO, and Ti/Al stripes surround the center of the LED mesa. At 20 mA current operation, the light output power of GaN-based LEDs with the stripe-contact electrodes is 16.26%-35.37% higher than that of the conventional LEDs.

引用

页数：3

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