The oxidizing of grain boundary defects in BaTiO3-based PTCR ceramics

被引：0

作者：

Qi, JQ ^{[1
]}

Zhang, NX ^{[1
]}

Gui, ZL ^{[1
]}

Li, LT ^{[1
]}

机构：

[1] Tsing Hua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

来源：

FERROELECTRICS | 2001年 / 263卷 / 1-4期

关键词：

oxidize; grain boundary; defects; PTCR; BaTiO3;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The oxygen pressure during sintering influences greatly on the positive temperature coefficient resistance (PTCR) effect of BaTiO3-based ceramics. Using Bi2O3 vapor acting as excess donor resulted in the dense samples with the resistance jumping > 8 magnitude orders and the room temperature resistivity similar to100Ohm.cm. The oxidized-defects at grain boundary acting as trap centers, would be responsible for the PTCR effect in BaTiO, ceramics.

引用

页码：1407 / 1412

页数：6

共 7 条

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