Er-Al-codoped silicate planar light waveguide-type amplifier fabricated by radio-frequency sputtering

被引：17
作者：
Choi, YB
Cho, SH
Moon, DC
机构：
[1] Korea Telecom, Access Network Lab, Yusung Gu, Taejon, South Korea
[2] Kwang Woon Univ, Dept Elect Mat Engn, Nowon Gu, Seoul, South Korea
来源：
OPTICS LETTERS | 2000年 / 25卷 / 04期
关键词：
D O I：
10.1364/OL.25.000263
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A planar light waveguide-type optical amplifier was designed and fabricated. A core layer of Er-Al-codoped SiO2 glass was deposited onto a silica cladding layer by rf sputtering. In the Er-doped core layer the average Er and Al concentrations were 0.77 and 11.37 wt %, respectively. We achieved 5 dB of gain with 20 mW of 980-nm pump power by using - 20 dBm of 1546-nm input signal power. (C) 2000 Optical Society of America OCIS codes: 310.1860, 230.7370, 160.6030, 040.6040, 030.4070, 250.4480.
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收藏
页码：263 / 265
页数：3
相关论文
共 10 条
[1]   Amplifying four-wavelength combiner, based on erbium/ytterbium-doped waveguide amplifiers and integrated splitters [J].
Barbier, D ;
Rattay, M ;
SaintAndre, F ;
Clauss, G ;
Trouillon, M ;
Kevorkian, A ;
Delavaux, JMP ;
Murphy, E .
IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (03) :315-317
[2]   Ion-exchanged planar lossless splitter at 1.5 mu m [J].
Camy, P ;
Roman, JE ;
Willems, FW ;
Hempstead, M ;
vanderPlaats, JC ;
Prel, C ;
Beguin, A ;
Koonen, AMJ ;
Wilkinson, JS ;
Lerminiaux, C .
ELECTRONICS LETTERS, 1996, 32 (04) :321-323
[3]   GUIDED-WAVE LASER BASED ON ERBIUM-DOPED SILICA PLANAR LIGHTWAVE CIRCUIT [J].
KITAGAWA, T ;
HATTORI, K ;
SHIMIZU, M ;
OHMORI, Y ;
KOBAYASHI, M .
ELECTRONICS LETTERS, 1991, 27 (04) :334-335
[4]  
KITAGAWA T, 1993, 1993 EUR C OPT COMM
[5]  
MYSLINSKI P, 1995, 1995 OSA TECHNICAL D, V8, P172
[6]  
SHMULOVITCH J, 1993, OPT FIB COMM C INT C, V4
[7]   ERBIUM-DOPED PHOSPHOSILICATE GLASS WAVE-GUIDE AMPLIFIER FABRICATED BY PECVD [J].
SHUTO, K ;
HATTORI, K ;
KITAGAWA, T ;
OHMORI, Y ;
HORIGUCHI, M .
ELECTRONICS LETTERS, 1993, 29 (02) :139-141
[8]  
SMULOVITCH J, 1997, PHOT W C FEBR 14 17
[9]   Net optical gain at 1.53 mu m in Er-doped Al2O3 waveguides on silicon [J].
vandenHoven, GN ;
Koper, RJIM ;
Polman, A ;
vanDam, C ;
vanUffelen, JWM ;
Smit, MK .
APPLIED PHYSICS LETTERS, 1996, 68 (14) :1886-1888
[10]  
VANWERDEN HJ, 1997, 1997 EUR C INT OPT E
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