Chemical vapor deposition of tantalum and tantalum nitride

被引：0
作者：
Hillman, J [1 ]
Hautala, J [1 ]
Caliendo, S [1 ]
机构：
[1] TEL, Gilbert, AZ 85233 USA
来源：
ADVANCED METALLIZATION CONFERENCE 2000 (AMC 2000) | 2001年
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
Tantalum and tantalum nitride films have been deposited by chemical vapor deposition (CVD) using three different inorganic precursors; tantalum pentafluoride (TaF5), tantalum pentachloride JaCl(5)) and tantalum pentabromide (TaBrs). All films were deposited at 350 C. The tantalum films had resistivities ranging from 55 to 220 muOmega-cm and halogen contents of 0.5% and lower. The tantalum nitride (TaN) films had resistivities ranging from 400 to several thousand muOmega-cm. These films had higher halogen contents than the tantalum films, but also had better conformality. Diffusion barrier testing results indicate that films deposited from TaF5 provide the best barrier to copper diffusion.
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页码：313 / 319
页数：7
相关论文
共 9 条
  • [1] CHEN X, 1998, THESIS STATE U NEW Y, P44
  • [2] Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications
    Chen, XM
    Peterson, GG
    Goldberg, C
    Nuesca, G
    Frisch, HL
    Kaloyeros, AE
    Arkles, B
    Sullivan, J
    [J]. JOURNAL OF MATERIALS RESEARCH, 1999, 14 (05) : 2043 - 2052
  • [3] Low temperature plasma-assisted chemical vapor deposition of tantalum nitride from tantalum pentabromide for copper metallization
    Chen, XM
    Frisch, HL
    Kaloyeros, AE
    Arkles, B
    Sullivan, J
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (01): : 182 - 185
  • [4] GITTLEMAN B, 2000, P 2 INT C ADV MAT PR
  • [5] Low temperature deposition of TaCN films using pentakis(diethylamido)tantalum
    Jun, GC
    Cho, SL
    Kim, KB
    Shin, HK
    Kim, DHY
    [J]. ADVANCED METALLIZATION FOR FUTURE ULSI, 1996, 427 : 349 - 354
  • [6] Tantalum nitride films grown by inorganic low temperature thermal chemical vapor deposition - Diffusion barrier properties in copper metallization
    Kaloyeros, AE
    Chen, XM
    Stark, T
    Kumar, K
    Seo, S
    Peterson, GG
    Frisch, HL
    Arkles, B
    Sullivan, J
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1999, 146 (01) : 170 - 176
  • [7] SUN SC, 1995, P 12 INT VLSI MULT I, P157
  • [8] Comparison of the diffusion barrier properties of chemical-vapor-deposited TaN and sputtered TaN between Cu and Si
    Tsai, MH
    Sun, SC
    Tsai, CE
    Chuang, SH
    Chiu, HT
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (09) : 6932 - 6938
  • [9] METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF TANTALUM NITRIDE BY TERTBUTYLIMIDOTRIS(DIETHYLAMIDO)TANTALUM FOR ADVANCED METALLIZATION
    TSAI, MH
    SUN, SC
    CHIU, HT
    TSAI, CE
    CHUANG, SH
    [J]. APPLIED PHYSICS LETTERS, 1995, 67 (08) : 1128 - 1130
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