Chemical vapor deposition of tantalum and tantalum nitride

被引：0

作者：

Hillman, J ^{[1
]}

Hautala, J ^{[1
]}

Caliendo, S ^{[1
]}

机构：

[1] TEL, Gilbert, AZ 85233 USA

来源：

ADVANCED METALLIZATION CONFERENCE 2000 (AMC 2000) | 2001年

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Tantalum and tantalum nitride films have been deposited by chemical vapor deposition (CVD) using three different inorganic precursors; tantalum pentafluoride (TaF5), tantalum pentachloride JaCl(5)) and tantalum pentabromide (TaBrs). All films were deposited at 350 C. The tantalum films had resistivities ranging from 55 to 220 muOmega-cm and halogen contents of 0.5% and lower. The tantalum nitride (TaN) films had resistivities ranging from 400 to several thousand muOmega-cm. These films had higher halogen contents than the tantalum films, but also had better conformality. Diffusion barrier testing results indicate that films deposited from TaF5 provide the best barrier to copper diffusion.

引用

页码：313 / 319

页数：7

共 9 条

[1]

CHEN X, 1998, THESIS STATE U NEW Y, P44

[2] Low-temperature chemical vapor deposition of tantalum nitride from tantalum pentabromide for integrated circuitry copper metallization applications [J].