Low-Voltage Organic Thin-Film Transistors With Solution-Processed Hafnium Oxide And Polymer Dielectrics

被引:0
作者
Biao, Xu [1 ]
Ping, Wang [1 ]
Jian, Zhong [1 ]
机构
[1] Univ Elect Sci & Technol China, Sch Optoelect Informat, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China
来源
8TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES | 2016年 / 9686卷
关键词
OTFTs; low-voltage; pentacene; solution-process; GATE DIELECTRICS; INSULATORS;
D O I
10.1117/12.2242697
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Low-voltage pentacene-based organic thin film transistors (OTFTs) are fabricated with solution-process hafnium oxide (HfO2) as gate dielectric layer. The dielectric high-k HfO2 film was deposited from the sol-gel solution prepared by dissolving HfCl4(98%, Sigma-Aldrich) in ethanol at a proper concentration. We have investigated the effects of the insulating layer on device. As a result, the device with only HfO2 gate dielectric exhibited a good performance with a threshold voltage of -0.88 V, a sub-threshold swing of 1.12 V/dec, and a high field-effect mobility of 1x10(-3) cm(2)/Vs. After employing a very thin PMMA film onto HfO2, the performance of the devices with bilayer dielectrics shows a great improvement. The mobility of these OTFTs can be further boost up to 1.2x10(-2) cm(2)/Vs, and the sub-threshold swing reduced to 0.77 V/dec and the drain current on/off ratio increased almost 7 times. The PMMA insulator buffer layer can also effectively reduce gate leakage current. The results demonstrate that an appropriate polymer buffer layer is a favorable way to improve the performance of the OTFTs with good electrical stability.
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页数:6
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