Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

被引：16

作者：

Lin, Zhiyu ^{[1
]}

Zhang, Jincheng ^{[1
]}

Xu, Shengrui ^{[1
]}

Chen, Zhibin ^{[1
]}

Yang, Shuangyong ^{[1
]}

Tian, Kun ^{[1
]}

Su, Xujun ^{[2
]}

Shi, Xuefang ^{[3
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Shaanxi, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China

[3] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

基金：

中国国家自然科学基金;

关键词：

YELLOW LUMINESCENCE; IMPURITY INCORPORATION; STACKING-FAULTS; DISLOCATIONS; DEFECTS; CATHODOLUMINESCENCE; HETEROSTRUCTURES; EPILAYERS; DIODES; FACE;

D O I：

10.1063/1.4894632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation. (C) 2014 AIP Publishing LLC.

引用

页数：5

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