Influence of vicinal sapphire substrate on the properties of N-polar GaN films grown by metal-organic chemical vapor deposition

被引：16

作者：

Lin, Zhiyu ^{[1
]}

Zhang, Jincheng ^{[1
]}

Xu, Shengrui ^{[1
]}

Chen, Zhibin ^{[1
]}

Yang, Shuangyong ^{[1
]}

Tian, Kun ^{[1
]}

Su, Xujun ^{[2
]}

Shi, Xuefang ^{[3
]}

Hao, Yue ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Technol, Xian 710071, Shaanxi, Peoples R China

[2] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215123, Jiangsu, Peoples R China

[3] Xidian Univ, Sch Adv Mat & Nanotechnol, Xian 710071, Shaanxi, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 08期

基金：

中国国家自然科学基金;

关键词：

YELLOW LUMINESCENCE; IMPURITY INCORPORATION; STACKING-FAULTS; DISLOCATIONS; DEFECTS; CATHODOLUMINESCENCE; HETEROSTRUCTURES; EPILAYERS; DIODES; FACE;

D O I：

10.1063/1.4894632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of vicinal sapphire substrates on the growth of N-polar GaN films by metal-organic chemical vapor deposition is investigated. Smooth GaN films without hexagonal surface feature are obtained on vicinal substrate. Transmission electron microscope results reveal that basal-plane stacking faults are formed in GaN on vicinal substrate, leading to a reduction in threading dislocation density. Furthermore, it has been found that there is a weaker yellow luminescence in GaN on vicinal substrate than that on (0001) substrate, which might be explained by the different trends of the carbon impurity incorporation. (C) 2014 AIP Publishing LLC.

引用

页数：5

共 50 条

[21] RF Performance of N-Polar AlGaN/GaN MIS-HEMTs Grown by MOCVD on Sapphire Substrate [J].

Kolluri, Seshadri ;

Pei, Yi ;

Keller, Stacia ;

Denbaars, Steven P. ;

Mishra, Umesh K. .

IEEE ELECTRON DEVICE LETTERS, 2009, 30 (06) :584-586

[22] Study of Low-Temperature (Al)GaN on N-Polar GaN Films Grown by MOCVD on Vicinal SiC Substrates [J].

Yang, Yong ;

Ni, Xianfeng ;

Fan, Qian ;

Gu, Xing .

MATERIALS, 2025, 18 (03)

[23] Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate [J].

Selvaraj, S. Lawrence ;

Watanabe, Arata ;

Egawa, Takashi .

APPLIED PHYSICS LETTERS, 2011, 98 (25)

[24] Correlation between structural and optical properties of a-plane GaN films grown on r-plane sapphire by metal organic chemical-vapor deposition [J].

Jung, Mina ;

Chang, Jiho ;

Lee, Hyunjae ;

Ha, Jun-seok ;

Park, Jin-sub ;

Park, Seungwhan ;

Fujii, Katsushi ;

Yao, Takafumi ;

Kil, Gyung-suk ;

Lee, Seogwoo ;

Cho, Myungwhan ;

Whang, Sungmin ;

Seo, Yong-gon .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03) :623-626

[25] Recent progress in metal-organic chemical vapor deposition of (000(1)over-bar) N-polar group-III nitrides [J].

Keller, Stacia ;

Li, Haoran ;

Laurent, Matthew ;

Hu, Yanling ;

Pfaff, Nathan ;

Lu, Jing ;

Brown, David F. ;

Fichtenbaum, Nicholas A. ;

Speck, James S. ;

DenBaars, Steven P. ;

Mishra, Umesh K. .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (11)

[26] Effect of growth temperature of AlN interlayers on the properties of GaN epilayers grown on c-plane sapphire by metal organic chemical vapor deposition [J].

Xue, J. S. ;

Hao, Y. ;

Zhang, J. C. ;

Yang, L. A. .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 10, 2010, 7 (10) :2371-2373

[27] Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition [J].

Park, Young S. ;

Kwon, Y. H. ;

Im, Hyunsik ;

Jung, Woong ;

Kim, Hyungsang ;

Kim, Minseon ;

Yang, W. C. ;

Lee, Junho ;

Choi, Hong Goo ;

Roh, Cheong Hyun ;

Hahn, Cheol-Koo .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2010, 56 (04) :1172-1175

[28] Improvements of electrical and thermal characteristics for AlGaN/GaN HEMT grown by metal-organic chemical vapor deposition on silicon-on-insulator (SOI) substrate [J].

Hieu, Le Trung ;

Chiang, Chung-Han ;

Anandan, Deepak ;

Dee, Chang-Fu ;

Hamzah, Azrul Azlan ;

Lee, Ching-Ting ;

Lin, Chung-Hsiung ;

Chang, Edward Yi .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (07)

[29] N-polar AlN buffer growth by metal-organic vapor phase epitaxy for transistor applications [J].

Lemettinen, Jori ;

Okumura, Hironori ;

Palacios, Tomas ;

Suihkonen, Sami .

APPLIED PHYSICS EXPRESS, 2018, 11 (10)

[30] Influence of nitridation process on characteristics of N-polar AlGaN films grown by MOCVD [J].

Wang, Xiaolei ;

Zhang, Xiong ;

Zhang, Heng ;

Zhao, Jianguo ;

Wu, Zili ;

Dai, Qian ;

Wang, Shuchang ;

Hu, Guohua ;

Cui, Yiping .

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 64 :147-151

← 1 2 3 4 5 →