Thin Film Applications in Advanced Electron Devices

被引:15
作者
Chiu, Fu-Chien [1 ]
Pan, Tung-Ming [2 ]
Kundu, Tapas Kumar [3 ]
Shih, Chun-Hsing [4 ]
机构
[1] Ming Chuan Univ, Dept Elect Engn, Taoyuan 333, Taiwan
[2] Chang Gung Univ, Dept Elect Engn, Taoyuan 333, Taiwan
[3] Visva Bharati Univ, Dept Phys, Santini Ketan 731235, W Bengal, India
[4] Natl Chi Nan Univ, Dept Elect Engn, Nantou 545, Taiwan
关键词
D O I
10.1155/2014/927358
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页数:2
相关论文
共 8 条
[1]   Physics and Applications of Bismuth Ferrite [J].
Catalan, Gustau ;
Scott, James F. .
ADVANCED MATERIALS, 2009, 21 (24) :2463-2485
[2]  
Chiu F.-C., 2012, HIGH K GATE DIELECTR, P111, DOI DOI 10.1002/9783527646340.CH5
[3]   An investigation of surface state capture cross-sections for metal-oxide-semiconductor field-effect transistors using HfO2 gate dielectrics [J].
Chiu, Fu-Chien ;
Shih, Wen-Chieh ;
Lee, Joseph Ya-min ;
Hwang, Huey-Liang .
MICROELECTRONICS RELIABILITY, 2007, 47 (4-5) :548-551
[4]   Conduction mechanism of resistive switching films in MgO memory devices [J].
Chiu, Fu-Chien ;
Shih, Wen-Chieh ;
Feng, Jun-Jea .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (09)
[5]   Reliability characteristics and conduction mechanisms in resistive switching memory devices using ZnO thin films [J].
Chiu, Fu-Chien ;
Li, Peng-Wei ;
Chang, Wen-Yuan .
NANOSCALE RESEARCH LETTERS, 2012, 7 :1-9
[6]   Interfacial and Electrical Characterization in Metal-Oxide-Semiconductor Field-Effect Transistors with CeO2 Gate Dielectric [J].
Chiu, Fu-Chien ;
Chen, Shuang-Yuan ;
Chen, Chun-Heng ;
Chen, Hung-Wen ;
Huang, Heng-Sheng ;
Hwang, Huey-Liang .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (04)
[7]   The charge trapping effect of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (HfO2)-silicon capacitors -: art. no. 044103 [J].
Juan, PC ;
Hu, YP ;
Chiu, FC ;
Lee, JYM .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (04)
[8]   Highly reliable copper dual-damascene interconnects with self-formed MnSixOy barrier layer [J].
Usui, Takamasa ;
Nasu, Hayato ;
Takahashi, Shingo ;
Shimizu, Noriyoshi ;
Nishikawa, T. ;
Yoshimaru, Masaki ;
Shibata, Hideki ;
Wada, Makoto ;
Koike, Junichi .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (10) :2492-2499