A highly conducting graphene film with dual-side molecular n-doping

被引：26

作者：

Kim, Youngsoo ^{[1
,2
]}

Park, Jaesung ^{[3
,4
]}

Kang, Junmo ^{[5
]}

Yoo, Je Min ^{[1
]}

Choi, Kyoungjun ^{[1
]}

Kim, Eun Sun ^{[1
]}

Choi, Jae-Boong ^{[5
]}

Hwang, Chanyong ^{[3
]}

Novoselov, K. S. ^{[4
]}

Hong, Byung Hee ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Chem, 1 Gwanak Ro, Seoul 151742, South Korea

[2] Seoul Natl Univ, Dept Phys & Astron, Seoul 151742, South Korea

[3] Korea Res Inst Stand & Sci, Ctr Nanometrol, Taejon 305340, South Korea

[4] Univ Manchester, Sch Phys & Astron, Manchester M13 9PL, Lancs, England

[5] Sungkyunkwan Univ, Sungkyunkwan Adv Inst Nanotechnol SAINT, Suwon 440746, South Korea

来源：

NANOSCALE | 2014年 / 6卷 / 16期

基金：

新加坡国家研究基金会;

关键词：

SELF-ASSEMBLED MONOLAYERS; SINGLE-LAYER GRAPHENE; DOPED GRAPHENE; TRANSISTORS; ELECTRODES; SCATTERING; RAMAN;

D O I：

10.1039/c4nr00479e

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Doping is an efficient way to engineer the conductivity and the work function of graphene, which is, however, limited to wet-chemical doping or metal deposition particularly for n-doping, Here, we report a simple method of modulating the electrical conductivity of graphene by dual-side molecular n-doping with diethylenetriamine (DETA) on the top and amine-functionalized self-assembled monolayers (SAMs) at the bottom. The resulting charge carrier density of graphene is as high as -1.7 x 10(13) cm(-2), and the sheet resistance is as low as, similar to 86 +/- 39 Omega sq(-1), which is believed to be the lowest sheet resistance of monolayer graphene reported so far. This facile dual-side n-doping strategy would be very useful to optimize the performance of various graphene-based electronic devices.

引用

页码：9545 / 9549

页数：5

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