Stress field analysis to understand the breakdown characteristics of stacked high-k dielectrics

被引：20

作者：

Lee, Byoung Hun ^{[1
,2
]}

Kang, Changyong ^{[3
]}

Choi, Rino ^{[4
]}

Lee, Hi-Deok ^{[5
]}

Bersuker, Gennadi ^{[3
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Nanosyst Engn, Kwangju 500712, South Korea

[2] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[3] SEMATECH, Austin, TX 78741 USA

[4] Inha Univ, Inchon 402751, South Korea

[5] Chungnam Natl Univ, Taejon 305764, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 16期

关键词：

dielectric thin films; electric breakdown; hafnium compounds; reliability; stress effects;

D O I：

10.1063/1.3122924

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The validity of the stress biases used in reliability studies of high-k dielectric is discussed by analyzing the stress biases used in previous works. For single layer dielectrics, stress biases near the time zero dielectric breakdown point have been used to reduce the test time. However, stacked dielectrics need a more careful approach to avoid overstress. We show that the majority of earlier work on the reliability of high-k dielectric used high electric field and those results may not be optimal for predicting intrinsic reliability characteristics. A simple guideline to avoid overstress is provided.

引用

页数：3

共 21 条

[1] Analysis of the degradation of HfO2/SiO2 gate stacks using nanoscale and device level techniques [J].