Influence of thermal environments on the growth of bulk cadmium zinc telluride (CZT) single crystals

被引:14
作者
Carcelen, V. [1 ]
Vijayan, N. [1 ,2 ]
Rodriguez-Ferndnaez, J. [1 ,4 ]
Hidalgo, P. [3 ]
Piqueras, J. [3 ]
Sochinskii, N. V. [4 ]
Perez, J. M. [5 ]
Dieguez, E. [1 ]
机构
[1] Univ Autonoma Madrid, Lab Crecimiento Cristale, Dpto Fis Mat, Fac Ciencias, E-28049 Madrid, Spain
[2] Natl Phys Lab, New Delhi 110012, India
[3] Univ Complutense Madrid, Dpto Fis Mat, Fac Ciencias Fis, E-28040 Madrid, Spain
[4] Polo Technol Madrid, CNM CSIC, Inst Microelect Madrid, Madrid 28760, Spain
[5] CIEMAT, Lab Gen Elect & Automat, E-28040 Madrid, Spain
关键词
Characterization; Bridgman technique; Growth from melt; Growth from vapour; semiconducting II-VI materials; VERTICAL BRIDGMAN; CDZNTE; DETECTORS; RAY;
D O I
10.1016/j.jcrysgro.2009.01.100
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The II-VI compound semiconductor crystal cadmium zinc telluride (CZT) is very important in the field of room-temperature radiation detectors and medical imaging applications. In the present study, bulk CZT single crystal has been grown by (i) oscillatory Bridgman technique, (ii) from vapour phase using pyrolytic boron nitride ampoule in the Bridgman geometry, and (iii) by using a Pt tube used for the ampoule support as a cold finger. Several improvements were found in the thermal environments such as the effects of superheating and reduced growth velocity, as well as improvements in the grain size and zinc composition along the ingot. The compositional homogeneity and its current-voltage characteristic behaviour have been analysed using energy dispersive X-ray analysis and I-V method, respectively. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1264 / 1267
页数:4
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