The shift of optical band gap in W-doped ZnO with oxygen pressure and doping level

被引：22

作者：

Chu, J. ^{[1
,2
]}

Peng, X. Y. ^{[1
]}

Dasari, K. ^{[1
]}

Palai, R. ^{[1
]}

Peng, P. ^{[1
]}

机构：

[1] Univ Puerto Rico, Dept Phys, San Juan, PR 00936 USA

[2] Chinese Acad Sci, Chongqing Inst Green & Intelligent Technol, Chongqing 400714, Peoples R China

来源：

MATERIALS RESEARCH BULLETIN | 2014年 / 54卷

关键词：

Oxide; Laser deposition; Raman spectroscopy; Optical properties; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; SPECTRA;

D O I：

10.1016/j.materresbull.2014.03.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Tungsten-doped (W-doped) zinc oxide (ZnO) nanostructures were synthesized on quartz substrates by pulsed laser and hot filament chemical vapor co-deposition technique under different oxygen pressures and doping levels. We studied in detail the morphological, structural and optical properties of W-doped ZnO by SEM, XPS, Raman scattering, and optical transmission spectra. A close correlation among the oxygen pressure, morphology, W concentrations and the variation of band gaps were investigated. XPS and Raman measurements show that the sample grown under the oxygen pressure of 2.7 Pa has the maximum tungsten concentration and best crystalline structure, which induces the redshift of the optical band gap. The effect of W concentration on the change of morphology and shift of optical band gap was also studied for the samples grown under the fixed oxygen pressure of 2.7 Pa. (C) 2014 Elsevier Ltd. All rights reserved.

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页码：73 / 77

页数：5

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