Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-MoTe2

被引：3
作者：
Pan, Yu [1 ,2 ,3 ]
Song, Yiwen [1 ,2 ,4 ]
Wang, Qi [1 ,2 ,4 ]
Wang, Tingting [1 ,2 ]
Li, Yanping [1 ,2 ]
Xu, Wanjin [1 ,2 ]
Ye, Yu [1 ,2 ,3 ,5 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Frontiers Sci Ctr Nanooptoelectron, Sch Phys, Beijing 100871, Peoples R China
[3] Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
[4] Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
[5] Peking Univ, Yangtze Delta Inst Optoelect, Nantong 226010, Jiangsu, Peoples R China
来源：
ACS APPLIED ELECTRONIC MATERIALS | 2022年 / 4卷 / 12期
基金：
国家重点研发计划; 北京市自然科学基金;
关键词：
two-dimensional materials; semiconductors; 2H-MoTe2; multitier structure; interconnection; INTEGRATION; STACKS; FUTURE;
D O I：
10.1021/acsaelm.2c01260
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two-dimensional (2D) 2H-MoTe2 is an emerging semiconductor with promising electronic and optoelectronic properties. Meanwhile, the in-plane 2D epitaxy mechanism via the 1T ' to 2H phase transition allows the synthesis of 2H-MoTe2 on arbitrary surfaces. Here, we demonstrate two routes for tier-by-tier growth and one-step growth to synthesize multitier 2H-MoTe2 isolated by atomic layer deposition aluminum oxide (Al2O3). Raman, scanning transmission electron microscopy, and other characterizations show that the periodic 2H-MoTe2/Al2O3 multilayer structure exhibits the characteristics of large-area preparation and high crystallinity. Our direct multitier growth routes move the first step toward realizing 3D-ICs and nonvolatile memories based on semiconducting 2H-MoTe2.
引用
收藏
页码：5733 / 5738
页数：6
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