Transport, magnetic and vibrational properties of chemically exfoliated few-layer graphene

被引:4
作者
Markus, Bence G. [1 ,2 ]
Simon, Ferenc [1 ,2 ]
Chacon-Torres, Julio C. [3 ]
Reich, Stephanie [3 ]
Szirmai, Peter [4 ]
Nafradi, Balint [4 ]
Forro, Laszlo [4 ]
Pichler, Thomas [5 ]
Vecera, Philipp [6 ,7 ]
Hauke, Frank [6 ,7 ]
Hirsch, Andreas [6 ,7 ]
机构
[1] Budapest Univ Technol & Econ, H-1521 Budapest, Hungary
[2] MTA BME Lendulet Spintron Res Grp PROSPIN, H-1521 Budapest, Hungary
[3] Free Univ Berlin, Inst Expt Phys, D-14195 Berlin, Germany
[4] FBS Swiss Fed Inst Technol EPFL, Inst Phys Complex Matter, CH-1015 Lausanne, Switzerland
[5] Univ Vienna, Fac Phys, A-1090 Vienna, Austria
[6] Univ Erlangen Nurnberg, Dept Chem & Pharm, D-91054 Erlangen, Germany
[7] Univ Erlangen Nurnberg, Inst Adv Mat & Proc ZMP, D-91054 Erlangen, Germany
来源
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2015年 / 252卷 / 11期
基金
欧洲研究理事会; 瑞士国家科学基金会;
关键词
chemical exfoliation; ESR; graphene; microwave conductivity; Raman; ELECTRON-SPIN-RESONANCE; CAVITY PERTURBATION TECHNIQUE; VAPOR-DEPOSITION; EPITAXIAL GRAPHENE; RAMAN-SPECTROSCOPY; MICROWAVE CAVITY; INTERNAL FIELD; LARGE-AREA; OXIDE; GRAPHITE;
D O I
10.1002/pssb.201552296
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
We study the vibrational, magnetic and transport properties of Few Layer Graphene (FLG) using Raman and electron spin resonance spectroscopy and microwave conductivity measurements. FLG samples were produced using wet chemical exfoliation with different post-processing, namely ultrasound treatment, shear mixing, and magnetic stirring. Raman spectroscopy shows a low intensity D mode which attests a high sample quality. The G mode is present at 1580 cm(-1) as expected for graphene. The 2D mode consists of 2 components with varying intensities among the different samples. This is assigned to the presence of single and few layer graphene in the samples. Electron Spin Resonance (ESR) spectroscopy shows a main line in all types of materials with a width of about 1 mT and a g-factor in the range of 2.005-2.010. Paramagnetic defect centers with a uniaxial g-factor anisotropy are identified, which shows that these are related to the local sp2 bonds of the material. All kinds of investigated FLGs have a temperature dependent resistance which is compatible with a small gap semiconductor. The difference in resistance is related to the different grain size of the samples. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码:2438 / 2443
页数:6
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