Narrow size-distributed silicon cluster beam generated using a spatiotemporal confined cluster source

被引:12
作者
Iwata, Y
Kishida, M
Muto, M
Yu, SW
Sawada, T
Fukuda, A
Takiya, T
Komura, A
Nakajima, K
机构
[1] Natl Inst Adv Ind Sci & Technol, Cluster Adv Nanoproc CRT, Tsukuba, Ibaraki 3058568, Japan
[2] Univ Tokyo, Dept Appl Chem, Bunkyo Ku, Tokyo 1138656, Japan
[3] Univ Tokyo, Dept Adv Mat Sci, Grad Sch Frontier Sci, Bunkyo Ku, Tokyo 1138656, Japan
[4] Hitachi Zosen Corp, Tech Res Inst, Osaka 5510022, Japan
[5] Kohshien Kinzoku Corp, Nishinomiya, Hyogo 6638241, Japan
关键词
D O I
10.1016/S0009-2614(02)00556-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have developed a new laser ablation type cluster source named 'spatiotemporal confined cluster source' (SCCS), which gives well-defined thermo-dynamical conditions for cluster growth with narrow size dispersion. A laser-induced shock is controlled to produce a definite mixed gas layer of the silicon vapor and helium gas, which is locally confined in a sub millimeter space, and conserved densely for a time of 160 mus. The generated silicon clusters, which are ionized by an ArF excimer laser for mass analysis without dissociation, show narrow size dispersion with characteristically higher abundance of stable Si23Hx (46%), S19Hx (14%), and Si21Hx (12%) clusters. (C) 2002 Published by Elsevier Science B.V.
引用
收藏
页码:36 / 42
页数:7
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