Metal-Insulator Transition Induced by Oxygen Vacancies from Electrochemical Reaction in Ionic Liquid-Gated Manganite Films

被引：78

作者：

Ge, Chen ^{[1
]}

Jin, Kui-Juan ^{[1
,2
]}

Gu, Lin ^{[1
,2
]}

Peng, Li-Cong ^{[1
]}

Hu, Yong-Sheng ^{[1
]}

Guo, Hai-Zhong ^{[1
]}

Shi, Hong-Fei ^{[1
]}

Li, Jian-Kun ^{[1
]}

Wang, Jia-Ou ^{[3
]}

Guo, Xiang-Xin ^{[4
]}

Wang, Can ^{[1
]}

He, Meng ^{[1
]}

Lu, Hui-Bin ^{[1
]}

Yang, Guo-Zhen ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China

[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100190, Peoples R China

[3] Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100049, Peoples R China

[4] Chinese Acad Sci, State Key Lab High Performance Ceram & Superfine, Shanghai Inst Ceram, Shanghai 200050, Peoples R China

来源：

ADVANCED MATERIALS INTERFACES | 2015年 / 2卷 / 17期

基金：

中国国家自然科学基金;

关键词：

ROOM-TEMPERATURE; SUPPRESSION; VO2;

D O I：

10.1002/admi.201500407

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A metal-insulator transition is realized in hole-doped manganite films via ionic liquid gating. This transition is ascribed to the oxygen vacancies originated from the electrochemical reaction between the trace water inside ionic liquids and the manganite films, and the water is an indispensable factor in this process. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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页数：6

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