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Enhancement of magnetic properties in (Ga,Mn)N nanowires due to N2 plasma treatment
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作者:

Baik, Jeong Min
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Pohang Univ Sci & Technol, Dept Mat Sci & Technol, Pohang 790784, Kyungbuk, South Korea Pohang Univ Sci & Technol, Dept Mat Sci & Technol, Pohang 790784, Kyungbuk, South Korea

Shon, Yoon
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Lee, Jong-Lam
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机构: Pohang Univ Sci & Technol, Dept Mat Sci & Technol, Pohang 790784, Kyungbuk, South Korea
机构:
[1] Pohang Univ Sci & Technol, Dept Mat Sci & Technol, Pohang 790784, Kyungbuk, South Korea
[2] Dongguk Univ, Quantum Funct Semicond Res Ctr, Chung Ku, Seoul 100715, South Korea
[3] Pohang Univ Sci & Technol, Dept Mat Sci & Engn, Pohang 790784, Kyungbuk, South Korea
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D O I:
10.1063/1.2360890
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
The local structure of Mn impurities in ferromagnetic (Ga,Mn)N nanowires was investigated using extended x-ray absorption fine structure (EXAFS). By N-2 plasma treatment, the nitrogen concentration increased and the ferromagnetic signal also increased. The EXAFS results showed that the Mn concentration occupying Ga sites increased and interstitially doped Mn atoms significantly decreased due to the plasma treatment. As a result, the N vacancies reduced and crystalline quality improved, resulting in the enhancement of ferromagnetic properties. (c) 2006 American Institute of Physics.
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