Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures

被引：40

作者：

Sirenko, YM ^{[1
]}

Jeon, JB ^{[1
]}

Lee, BC ^{[1
]}

Kim, KW ^{[1
]}

Littlejohn, MA ^{[1
]}

Stroscio, MA ^{[1
]}

Iafrate, GJ ^{[1
]}

机构：

[1] USA, RES OFF, RES TRIANGLE PK, NC 27709 USA

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.55.4360

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The energy spectrum and transitions of valence-band carriers in wurtzite materials are studied theoretically using cubic crystals for comparison. We correct the commonly used cubic approximation and propose notations for Luttinger-like parameters in wurtzite structures that simplify the cubic approximation to gamma(1z)=gamma(1 perpendicular to), gamma(2z)=gamma(2 perpendicular to), and gamma(3z)=gamma(3 perpendicular to). We establish the relation between two recently proposed 3x3 matrix blocks diagonalizing the full 6x6 Hamiltonian and provide geometric interpretation in three-dimensional Bloch space. The formalism is used then to derive transition matrix elements for three types of processes: (i) macrofield hole scattering, described by the Bloch overlap factor; (ii) optical transitions between conduction and valence bands; and (iii) intervalence band optical transitions. Finally, we discuss the set of material parameters for group-III nitrides and present the numerical results.

引用

页码：4360 / 4375

页数：16

共 108 条

[31] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].