Device Electrostatics and High Temperature Operation of Oxygen Terminated Boron Doped Diamond MOS Capacitor and MOSFET

被引：2
作者：
Pullaiah, Yerragudi [1 ]
Emani, Naresh Kumar [1 ]
Nayak, Kaushik [1 ]
机构：
[1] Indian Inst Technol Hyderabad, Elect Engn Dept, Hyderabad, India
来源：
2020 IEEE ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2020) | 2020年
关键词：
Diamond MOS Capacitor; Deep Depletion; Diamond MOSFET; TCAD Simulation; Breakdown; SINGLE-CRYSTAL DIAMOND; CARRIER MOBILITY;
D O I：
10.1109/edtm47692.2020.9117884
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The oxygen-terminated bulk boron doped diamond MOSFET has been designed and simulated using coupled drift-diffusion transport-poisson solver within the TCAD analysis. The diamond MOS capacitor (MOSC) performance is dictated by accumulation, depletion, and deep depletion regimes of operation. We successfully calibrate the fitting parameters in the physical models such as doping and high-field limited carrier mobility, dopant ionization energies, and energy band gap dependence on temperature with experimental C-V and transfer characteristics. We show that the threshold voltage is sensitive to high temperatures. The device exhibits reasonably good ON to OFF current ratio of 10(8) -10(4) at wide temperature range from 300 K - 550 K. We also show that the device exhibits a breakdown voltage of -270 V with the chosen impact ionization coefficients.
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页数：4
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