Graphene Field-Effect Transistors for Radio-Frequency Flexible Electronics

被引：62

作者：

Petrone, Nicholas ^{[1
]}

Meric, Inanc ^{[1
,2
]}

Chari, Tarun ^{[3
]}

Shepard, Kenneth L. ^{[3
]}

Hone, James ^{[1
]}

机构：

[1] Columbia Univ, Dept Mech Engn, New York, NY 10023 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

[3] Columbia Univ, Dept Elect Engn, New York, NY 10023 USA

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2015年 / 3卷 / 01期

关键词：

Chemical vapor deposition (CVD); FET; flexible electronics; grapheme; radio-frequency (RF); SILICON NANOMEMBRANES; PERFORMANCE;

D O I：

10.1109/JEDS.2014.2363789

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Flexible radio-frequency (RF) electronics require materials which possess both exceptional electronic properties and high-strain limits. While flexible graphene field-effect transistors (GFETs) have demonstrated significantly higher strain limits than FETs fabricated from thin films of Si and III-V semiconductors, to date RF performance has been comparatively worse, limited to the low GHz frequency range. However, flexible GFETs have only been fabricated with modestly scaled channel lengths. In this paper, we fabricate GFETs on flexible substrates with short channel lengths of 260 nm. These devices demonstrate extrinsic unity-power-gain frequencies, f(max), up to 7.6 GHz and strain limits of 2%, representing strain limits an order of magnitude higher than the flexible technology with next highest reported fmax.

引用

页码：44 / 48

页数：5

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