Thermal and Electrical Characterization of Materials for Phase-Change Memory Cells

被引：44

作者：

Fallica, Roberto ^{[1
]}

Battaglia, Jean-Luc ^{[2
]}

Cocco, Simone ^{[1
]}

Monguzzi, Cristiano ^{[1
]}

Teren, Andrew ^{[1
]}

Wiemer, Claudia ^{[1
]}

Varesi, Enrico ^{[3
]}

Cecchini, Raimondo ^{[3
]}

Gotti, Andrea ^{[3
]}

Fanciulli, Marco ^{[1
,4
]}

机构：

[1] CNR INFM Lab MDM, I-20041 Agrate Brianza, MI, Italy

[2] ENSAM Dept Mech Esplanade Arts & Metiers, Lab TREFLE, F-33405 Talence, France

[3] STMicroelect M6, I-20041 Agrate Brianza, MI, Italy

[4] Univ Milan, Dipartimento Sci Mat, Milan, Italy

来源：

JOURNAL OF CHEMICAL AND ENGINEERING DATA | 2009年 / 54卷 / 06期

关键词：

CONDUCTIVITY; FILMS;

D O I：

10.1021/je800770s

中图分类号：

O414.1 [热力学];

学科分类号：

摘要：

The thermal properties of the phase-change chalcogenide alloy Ge2Sb2Te5 in its three phases (amorphous, cubic, and hexagonal) and Of Si3N4 and SiO2 have been studied to obtain reliable values for device modeling. Thermal conductivity was determined, along with a quantitative estimation of the thermal resistances of the layers' interfaces, not negligible for highly scaled devices. Electrical resistivity of the chalcogenide material has also been investigated during the phase transition by in situ measurement at constant heating rate.

引用

页码：1698 / 1701

页数：4

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