High electric field phenomena in polycrystalline silicon thin-film transistors

被引：1

作者：

Fortunato, G

Carluccio, R

Colalongo, L

Giovannini, S

Mariucci, L

Massussi, F

Valdinoci, M

机构：

来源：

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS TECHNOLOGY AND APPLICATIONS | 1997年 / 3014卷

关键词：

polycrystalline silicon; thin-film transistors; hot-carrier effects; kink-effect; interface state density; impact ionization;

D O I：

10.1117/12.270290

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polysilicon thin-film transistors are of great interest for their application in large area microelectronics and especially for their circuit applications. A successfull circuit design requires a proper understanding of the electrical characteristics and in the present work some specific aspects related to the presence of high electric fields at the drain end of the channel are presented.

引用

页码：148 / 159

页数：12