Low-temperature crystallization of Pb(Zr0.4,Ti0.6)O3 thin films by chemical solution deposition

被引：0
|
作者：
Maki, K [1 ]
Soyama, N [1 ]
Nagamine, K [1 ]
Mori, S [1 ]
Ogi, K [1 ]
机构：
[1] Mitsubishi Mat Corp, Dev Sect, Sanda Plant, Sanda, Hyogo 6691339, Japan
来源：
FERROELECTRIC THIN FILMS X | 2002年 / 688卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied the crystallization of sol-gel derived Pb(Zr0.4Ti0.6)O-3 [PZT(40/60)] thin films at 400 down to 390degreesC on Pt/SiO2/Si substrates by combination of diol-based solutions and modified film preparation processes. It was found that PZT films could be crystallized at 390degreesC and that PZT films crystallized at 400degreesC had microstructures with perovskite-single-phase columnar grains and good ferroelectric characteristics such as switched polarization (2 P-r) of 20 muC/cm(2) and relative permittivity (epsilon(r)) of 740. Next, we evaluated annealing temperature dependence of PZT(40/60) thin films crystallized at 390 to 435degreesC. The results indicated that (1 I I)-orientation of perovskite phases became weaker, (100)-orientation of those became stronger, and the perovskite grain size increased with decreasing in annealing temperature.
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页码：27 / 32
页数：6
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