The influence of working atmosphere on Y3(Al,Ga)5O12:Tb thin films grown with the PLD technique

被引：0
|
作者：
Yousif, A. [1 ,2 ]
Swart, H. C. [1 ]
Ntwaeaborwa, O. M. [1 ]
Coetsee, E. [1 ]
机构：
[1] Univ Orange Free State, Dept Phys, ZA-9300 Bloemfontein, South Africa
[2] Univ Khartoum, Dept Phys, Fac Educ, Omdurman 11115, Sudan
来源：
PROCEEDINGS OF SAIP2012: THE 57TH ANNUAL CONFERENCE OF THE SOUTH AFRICAN INSTITUTE OF PHYSICS | 2012年
关键词：
DEPOSITION; PHOSPHOR;
D O I：
暂无
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Y-3(Al,Ga)(5)O-12:Tb thin films were gown on Si (100) substrates using the pulsed laser deposition technique. The influence of working atmosphere (base pressure, O-2, Ar and N-2) on morphology and structure of the thin films were investigated by Atomic force microscopy (AFM) and X-ray diffraction (XRD), respectively. Auger electron spectroscopy (AES) was employed to analyze the surface chemical composition of the films and the Auger data confirmed the presence of all major elements, namely Yttrium (Y), Aluminum (Al), Gallium (Ga) and Oxygen (O) present in the Y-3(Al,Ga)(5)O-12:Tb phosphor. The brightest emission was observed from the film which was deposited in the O-2 atmosphere, indicating that oxygen is the best working atmosphere for growing the Y-3(Al,Ga)(5)O-12:Tb thin films AES also shows the differences in atomic concentration of the different films in comparison with that of the phosphor powder. The concentration of the elements of the O-2 atmosphere thin film was more similar to the elemental concentration of the powder itself.
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页码：252 / 257
页数：6
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