A novel InSb photodiode infrared sensor operating at room temperature

被引：0

作者：

Ueno, Koichiro ^{[1
]}

Camargo, Edson G. ^{[1
]}

Kawakami, Yoshifumi ^{[1
]}

Moriyasu, Yoshitaka ^{[1
]}

Nagase, Kazuhiro ^{[1
]}

Kuze, Naohiro ^{[1
]}

机构：

[1] Asahi Kasei Corp, Cent R&D Labs, 2-1 Samejima, Fuji, Shizuoka 4168501, Japan

来源：

PROGRESS IN SEMICONDUCTOR MATERIALS V-NOVEL MATERIALS AND ELECTRONIC AND OPTOELECTRONIC APPLICATIONS | 2006年 / 891卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A microchip-sized InSb photodiode based infrared sensor (InSb PDS) that operates at room temperature was developed. The InSb PDS consists of 700 photodiodes connected in series and consumes no power, because it works in photovoltaic mode to output an open circuit voltage. The TnSb PDS has a typical responsivity of 1,900 V/W and an output noise of 0.15 mu V/Hz(1/2). A detectivity of 2.8x 10(8) cmHz(1/2)/W was obtained at 300 K. The InSb PDS has performance high enough for applications such as mobile electronic equipment, personal computers, and consumer electronics.

引用

页码：245 / +

页数：2

共 7 条

[1] AMBIENT-TEMPERATURE DIODES AND FIELD-EFFECT TRANSISTORS IN INSB/IN1-XALXSB [J].

ASHLEY, T ;

DEAN, AB ;

ELLIOTT, CT ;

MCCONVILLE, CF ;

PRYCE, GJ ;

WHITEHOUSE, CR .

APPLIED PHYSICS LETTERS, 1991, 59 (14) :1761-1763

[2] 1/f noise studies in uncooled narrow gap Hg1-xCdxTe non-equilibrium diodes [J].

Elliott, CT ;

Gordon, NT ;

Hall, RS ;

Phillips, TJ ;

Jones, CL ;

Best, A .

JOURNAL OF ELECTRONIC MATERIALS, 1997, 26 (06) :643-648

[3] 8-13 MU-M INASSB HETEROJUNCTION PHOTODIODE OPERATING AT NEAR ROOM-TEMPERATURE [J].

KIM, JD ;

KIM, S ;

WU, D ;

WOJKOWSKI, J ;

XU, J ;

PIOTROWSKI, J ;

BIGAN, E ;

RAZEGHI, M .

APPLIED PHYSICS LETTERS, 1995, 67 (18) :2645-2647

[4]

KIM JD, 1998, OPTO-ELECTRON REV, V6, P217

[5]

KUZE N, 2006, IN PRESS PHYS STAT C

[6] Extension of longwavelength IR photovoltaic detector operation to near room-temperatures [J].

Piotrowski, J ;

Gawron, W .

INFRARED PHYSICS & TECHNOLOGY, 1995, 36 (07) :1045-1051

[7]

RAZEGHI M, 1998, OPTO-ELECTRON REV, V6, P155

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