Physical Model Analysis During Transient for Series-Connected HVIGBTs

被引：26

作者：

Ji, Shiqi ^{[1
]}

Lu, Ting ^{[1
]}

Zhao, Zhengming ^{[1
]}

Yu, Hualong ^{[1
]}

Yuan, Liqiang ^{[1
]}

Yang, Sheng ^{[1
]}

Secrest, Caleb ^{[2
]}

机构：

[1] Tsinghua Univ, Dept Elect Engn, State Key Lab Power Syst, Beijing 100084, Peoples R China

[2] Univ Wisconsin, Dept Elect & Comp Engn, Madison, WI 53706 USA

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2014年 / 29卷 / 11期

基金：

国家高技术研究发展计划(863计划);

关键词：

High-voltage insulated-gated bipolar transistor (HVIGBT); series-connected; tail current; voltage unbalance; HIGH-VOLTAGE IGBTS;

D O I：

10.1109/TPEL.2014.2300104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Obvious differences are observed between simulation and experimental results for series-connected insulated-gate bipolar transistors (IGBTs) using current IGBT models. Here, the cause of these errors is analyzed in detail. A physical model based on more effective assumptions for a 2-D structure is proposed in this paper. The relationship between carrier concentration and lifetime is considered in the model in order to achieve an accurate description for excess carrier distribution. Testing was performed in a buck converter using series-connected non-punch-through (NPT) planar-gate 6500 V/600 A high-voltage IGBTs (HVIGBTs) at various bus voltages using an asynchronous control signal. The accuracy of HVIGBT transient model is verified by comparing experimental and simulation results in buck converters using two and three series-connected IGBTs. The function of the RC snubber circuit is also evaluated using the proposed model.

引用

页码：5727 / 5737

页数：11

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