We report modification of electrical and magnetoresistive properties for the La2/3Sr1/3MnO3/MgO(100) thin films influenced by high power pulsed (tau congruent to 10 ns) laser radiation (lambda = 532 nm). SEM surface study revealed cracks extended along [100] directions and partially melted material at film surface with radiation power increasing. Low field magnetoresistance typical for high quality intergrain junctions has been measured at T< 240 K for the films with laser beam-induced cracks while partial melting of the material resulted increased electrical resistance, lowering of the paramagnetic to ferromagnetic transition temperature T-C and reduced magmetoresistance values in the vicinity of T-C.
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Zhengzhou Univ Light Ind, Technol & Phys Dept, Zhengzhou 450002, Peoples R ChinaZhengzhou Univ Light Ind, Technol & Phys Dept, Zhengzhou 450002, Peoples R China
Liu, Dewei
Zhang, Qiaoli
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N China Univ Water Conservancy & Elect Power, Coll Math & Informat Sci, Zhengzhou 450011, Peoples R ChinaZhengzhou Univ Light Ind, Technol & Phys Dept, Zhengzhou 450002, Peoples R China
Zhang, Qiaoli
Wang, Yusheng
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N China Univ Water Conservancy & Elect Power, Coll Math & Informat Sci, Zhengzhou 450011, Peoples R ChinaZhengzhou Univ Light Ind, Technol & Phys Dept, Zhengzhou 450002, Peoples R China
Wang, Yusheng
Xia, Zhengcai
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Huazhong Univ Sci & Technol, Educ Key Lab Pulsed High Magnet Field, Wuhan 430074, Peoples R ChinaZhengzhou Univ Light Ind, Technol & Phys Dept, Zhengzhou 450002, Peoples R China