INFLUENCE OF PULSED LASER RADIATION ON ELECTRICAL AND MAGNETORESISTIVE PROPERTIES OF La2/3Sr1/3MnO3 FILMS

被引：0
|
作者：
Cerniuke, I. [1 ]
Vengalis, B. [1 ]
Anisimovas, F. [1 ]
Maneikis, A. [1 ]
Grigaliunaite-Vonseviciene, G. [2 ]
机构：
[1] Ctr Phys Sci & Technol, Inst Semicond Phys, Gostauto 11, LT-01108 Vilnius, Lithuania
[2] Vilnius Gediminas Tech Univ, LT-10223 Vilnius, Lithuania
来源：
5TH INTERNATIONAL CONFERENCE RADIATION INTERACTION WITH MATERIALS: FUNDAMENTALS AND APPLICATIONS 2014 | 2014年
关键词：
LSMO thin films; magnetoresistance; laser-induced defects;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
We report modification of electrical and magnetoresistive properties for the La2/3Sr1/3MnO3/MgO(100) thin films influenced by high power pulsed (tau congruent to 10 ns) laser radiation (lambda = 532 nm). SEM surface study revealed cracks extended along [100] directions and partially melted material at film surface with radiation power increasing. Low field magnetoresistance typical for high quality intergrain junctions has been measured at T< 240 K for the films with laser beam-induced cracks while partial melting of the material resulted increased electrical resistance, lowering of the paramagnetic to ferromagnetic transition temperature T-C and reduced magmetoresistance values in the vicinity of T-C.
引用
收藏
页码：286 / +
页数：2
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